First Order Quasi Static MOSFET Channel Capacitance Model

First Order Quasi Static MOSFET Channel Capacitance Model

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In conclusion, there is a need to extend this work to include channel charge with a non-linear voltage dependence that does not generate extra power dissipation in the channel that has no physical basis.[1.28] Yannis Tsividis, a€œOperation and the Modeling of The MOS Transistorsa€, Oxford University Press, June 2003. [1.29] William Liu, a€œMOSFET models for SPICE simulation, including BSIM3v4 and BSIM4a€, John Wiley and Sons, Inc., 2001. [1.30] Yuhua Cheng and ... 270-278, Feb 2006. [2.1] J.E. Meyer, a€œMOS models andanbsp;...


Title:First Order Quasi Static MOSFET Channel Capacitance Model
Author:
Publisher:ProQuest - 2008
ISBN-13:

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